? semiconductor components industries, llc, 2004 may, 2004 ? rev. 4 1 publication order number: bc635/d bc635, bc637, bc639, bc639-16 high current transistors npn silicon features ? pb?free package is available* maximum ratings rating symbol value unit collector-emitter voltage bc635 bc637 bc639 v ceo 45 60 80 vdc collector-base voltage bc635 bc637 bc639 v cbo 45 60 80 vdc emitter-base voltage v ebo 5.0 vdc collector current ? continuous i c 1.0 adc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 800 12 mw mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping 2 ordering information bc635rl1 to?92 2000/tape & reel collector 2 3 base 1 emitter bc635zl1 to?92 2000/ammo pack bc637 to?92 5000 units/box bc639 to?92 5000 units/box bc639rl1 to?92 2000/tape & reel bc639zl1 to?92 2000/ammo pack bc639?16zl1 to?92 2000/ammo pack to?92 case 29 style 14 3 2 1 marking diagram bc 63xx yww bc63xx = specific device code y = year ww = work week = pb?free package bc639?16zl1g to?92 (pb?free) 2000/ammo pack http://onsemi.com 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d.
bc635, bc637, bc639, bc639?16 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (1) (i c = 10 adc, i b = 0) bc635 bc637 bc639 v (br)ceo 45 60 80 ? ? ? ? ? ? vdc collector ? emitter zero?gate breakdown voltage (1) (i c = 100 adc, i b = 0) bc639?16 v (br)ces 120 ? ? vdc collector ? base breakdown voltage (i c = 100 adc, i e = 0) bc635 bc637 bc639 v (br)cbo 45 60 80 ? ? ? ? ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? ? vdc collector cutoff current (v cb = 30 vdc, i e = 0) (v cb = 30 vdc, i e = 0, t a = 125 c) i cbo ? ? ? ? 100 10 nadc adc on characteristics (note 1) dc current gain (i c = 5.0 madc, v ce = 2.0 vdc) (i c = 150 madc, v ce = 2.0 vdc) bc635 bc637 bc639 bc639?16zlt1 (i c = 500 ma, v ce = 2.0 v) h fe 25 40 40 40 100 25 ? ? ? ? ? ? ? 250 160 160 250 ? ? collector ? emitter saturation voltage (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.5 vdc base ? emitter on voltage (i c = 500 madc, v ce = 2.0 vdc) v be(on) ? ? 1.0 vdc dynamic characteristics current ? gain ? bandwidth product (i c = 50 madc, v ce = 2.0 vdc, f = 100 mhz) f t ? 200 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob ? 7.0 ? pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ib ? 50 ? pf 1. pulse test: pulse width 300 s, duty cycle 2.0%.
bc635, bc637, bc639, bc639?16 http://onsemi.com 3 i c , collector current (ma) h fe , dc current gain f, current-gain bandwidth product (mhz) t v, voltage (volts) v , temperature coefficients (mv/ c) q 1000 1 2 5 10 20 50 100 200 500 100 1 2 3 4 5 7 10 20 30 40 50 70 v ce , collector-emitter voltage (volts) figure 1. active region safe operating area bc635 bc637 bc639 p d t a 25 c p d t c 25 c soa = 1s p d t c 25 c p d t a 25 c 500 200 100 50 20 1 3 5 10 30 50 100 300 500 1000 i c , collector current (ma) figure 2. dc current gain v ce = 2 v 500 300 100 50 20 1 10 100 1000 i c , collector current (ma) figure 3. current?gain e bandwidth product v ce = 2 v 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 i c , collector current (ma) figure 4. asaturationo and aono voltages v be(sat) @ i c /i b = 10 v be(on) @ v ce = 2 v v ce(sat) @ i c /i b = 10 -0.2 -1.0 -2.2 -1.6 1 3 5 10 30 50 100 300 500 1000 i c , collector current (ma) figure 5. temperature coefficients v ce = 2 volts t = 0 c to +100 c v for v be
bc635, bc637, bc639, bc639?16 http://onsemi.com 4 package dimensions to?92 (to?226) case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 14: pin 1. emitter 2. collector 3. base on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bc635/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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